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Package M135
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF TRANS NPN 35V 175MHZ M135
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Technical Details

Supply Chain

Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)

Physical

Mount Chassis Mount, Stud
Mounting Type Chassis Mount
Package / Case M135
Number of Pins 4
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Published 2003
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature WITH EMITTER BALLASTED RESISTORS
Subcategory Other Transistors
Max Power Dissipation 60W
Terminal Position RADIAL
Terminal Form FLAT
Pin Count 4
Number of Elements 1
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 35V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA 5V
Collector Emitter Breakdown Voltage 35V
Gain 7.6dB
Max Frequency 175MHz
Frequency - Transition 175MHz
Collector Base Voltage (VCBO) 65V
Highest Frequency Band VERY HIGH FREQUENCY B
Collector-Base Capacitance-Max 65pF
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