SD1224-02

Microsemi Corporation

RoHS

Package M113

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF

Description Trans GP BJT NPN 35V 5A 4-Pin Style M113

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Inventory: 9987

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Technical Details

Supply Chain

Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)

Physical

Mount Chassis Mount, Screw

Mounting Type Chassis Mount

Package / Case M113

Number of Pins 4

Supplier Device Package M113

Technical

Operating Temperature 200°C TJ

Packaging Bulk

Published 2004

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Max Operating Temperature 200°C

Min Operating Temperature -65°C

Max Power Dissipation 60W

Power - Max 60W

Transistor Type NPN

Collector Emitter Voltage (VCEO) 35V

Max Collector Current 5A

DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA 5V

Collector Emitter Breakdown Voltage 35V

Gain 7.6dB

Voltage - Collector Emitter Breakdown (Max) 35V

Current - Collector (Ic) (Max) 5A

Max Frequency 175MHz

Frequency - Transition 175MHz

Collector Base Voltage (VCBO) 65V

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

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