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ITC1100

Microsemi Corporation
RoHS
/
Package 55SW
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Trans RF BJT 30V 80A 3-Pin Case 55SW-1
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Technical Details

Supply Chain

Factory Lead Time 22 Weeks

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Published 2000
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Power Dissipation 3.4kW
Terminal Position DUAL
Terminal Form FLAT
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power Dissipation 3.4kW
Power - Max 3400W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 80A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 5A 5V
Collector Emitter Breakdown Voltage 65V
Gain 10dB ~ 10.5dB
Frequency - Transition 1.03GHz
Collector Base Voltage (VCBO) 65V
Emitter Base Voltage (VEBO) 3.5V
Highest Frequency Band L B

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case 55SW
Number of Pins 3
Transistor Element Material SILICON

Alternative Model

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