DME500

Microsemi Corporation

RoHS

Package 55KT

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF

Description Trans GP BJT NPN 55V 40A 3-Pin Case 55KT-1

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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Technical

Operating Temperature 200°C TJ

Packaging Bulk

Published 1996

JESD-609 Code e0

Pbfree Code no

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 2

ECCN Code EAR99

Terminal Finish TIN LEAD

Max Power Dissipation 1.7kW

Terminal Position DUAL

Terminal Form FLAT

Pin Count 2

JESD-30 Code R-CDFM-F2

Number of Elements 1

Configuration SINGLE

Power - Max 1700W

Transistor Application SWITCHING

Polarity/Channel Type NPN

Transistor Type NPN

Collector Emitter Voltage (VCEO) 55V

Max Collector Current 40A

DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 500mA 5V

Collector Emitter Breakdown Voltage 55V

Gain 6dB ~ 6.5dB

Max Frequency 1.15GHz

Frequency - Transition 1.025GHz~1.15GHz

Highest Frequency Band L B

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

Physical

Mount Chassis Mount, Screw

Mounting Type Chassis Mount

Package / Case 55KT

Number of Pins 55

Transistor Element Material SILICON

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