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JTDB75

Microsemi Corporation
RoHS
/
Package 55AW
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF TRANS NPN 55V 1.215GHZ 55AW
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case 55AW
Number of Pins 55
Transistor Element Material SILICON

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Published 2016
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Subcategory BIP RF Small Signal
Max Power Dissipation 220W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code R-CDFM-F2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A 5V
Collector Emitter Breakdown Voltage 55V
Gain 7dB ~ 8.2dB
Current - Collector (Ic) (Max) 8A
Frequency - Transition 960MHz~1.215GHz
Highest Frequency Band L B

Compliance

RoHS Status RoHS Compliant

Alternative Model

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