MS2212

Microsemi Corporation

RoHS

Package M222

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF

Description Trans GP BJT NPN 0.002A 4-Pin Case M222

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Technical Details

Physical

Mount Chassis Mount, Screw

Mounting Type Chassis Mount

Package / Case M222

Number of Pins 4

Transistor Element Material SILICON

Technical

Operating Temperature 250°C TJ

Packaging Bulk

Published 2004

JESD-609 Code e0

Pbfree Code no

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 2

Terminal Finish TIN LEAD

Additional Feature HIGH RELIABILITY

Subcategory Other Transistors

Max Power Dissipation 50W

Terminal Position DUAL

Terminal Form FLAT

Pin Count 2

JESD-30 Code S-CDFM-F2

Number of Elements 1

Configuration SINGLE

Case Connection BASE

Transistor Application AMPLIFIER

Polarity/Channel Type NPN

Transistor Type NPN

Max Collector Current 1.8A

DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 500mA 5V

Collector Emitter Breakdown Voltage 55V

Gain 8.1dB ~ 8.9dB

Max Frequency 1.215GHz

Frequency - Transition 960MHz~1.215GHz

Collector Base Voltage (VCBO) 55V

Highest Frequency Band L B

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

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