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0204-125

Microsemi Corporation
RoHS
/
Package 55JT
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description TRANS RF BIPO 125W 500MHZ 55JT2
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Inventory: 9830
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 2 weeks ago)

Physical

Contact Plating Tin
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case 55JT
Number of Pins 55
Transistor Element Material SILICON

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Published 1996
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Max Power Dissipation 270W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-CDFM-F8
Qualification Status Not Qualified
Number of Elements 2
Configuration COMMON EMITTER, 2 ELEMENTS
Power - Max 270W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 16A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A 5V
Collector Emitter Breakdown Voltage 60V
Gain 7dB ~ 8.5dB
Frequency - Transition 225MHz~400MHz
Highest Frequency Band ULTRA HIGH FREQUENCY B

Compliance

RoHS Status RoHS Compliant

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