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MS2215

Microsemi Corporation
RoHS
/
Package M216
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Trans GP BJT NPN 55V 16.5A 4-Pin Case M216
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case M216
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature 250°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Power Dissipation 300W
Terminal Position DUAL
Terminal Form FLAT
Pin Count 2
JESD-30 Code R-CDFM-F2
Number of Elements 1
Configuration SINGLE
Case Connection BASE
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 55V
Max Collector Current 16.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A 5V
Collector Emitter Breakdown Voltage 55V
Gain 7.5dB
Max Frequency 1.215GHz
Frequency - Transition 960MHz~1.215GHz
Collector Base Voltage (VCBO) 55V
Highest Frequency Band L B

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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