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MS2200

Microsemi Corporation
RoHS
/
Package M102
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Trans GP BJT NPN 65V 43.2A 5-Pin Case M-102
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Technical Details

Supply Chain

Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case M102
Number of Pins 5
Transistor Element Material SILICON

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature HIGH RELIABILITY
Max Power Dissipation 1.167kW
Terminal Position DUAL
Terminal Form FLAT
Pin Count 4
JESD-30 Code R-CDFM-F4
Number of Elements 1
Configuration SINGLE
Case Connection BASE
Power - Max 1167W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 43.2A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A 5V
Collector Emitter Breakdown Voltage 65V
Gain 9.7dB
Max Frequency 500MHz
Frequency - Transition 400MHz~500MHz
Collector Base Voltage (VCBO) 65V
Highest Frequency Band ULTRA HIGH FREQUENCY B

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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