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UTV8100B

Microsemi Corporation
RoHS
/
Package 55RT
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Trans GP BJT NPN 30V 15A 5-Pin Case 55RT-2
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Technical Details

Supply Chain

Factory Lead Time 13 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case 55RT
Number of Pins 55
Transistor Element Material SILICON

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Published 1997
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature HIGH RELIABILITY
Max Power Dissipation 290W
Terminal Position DUAL
Terminal Form FLAT
Pin Count 4
JESD-30 Code R-CDFM-F4
Number of Elements 2
Configuration COMMON EMITTER, 2 ELEMENTS
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A 5V
Collector Emitter Breakdown Voltage 60V
Gain 8.5dB ~ 9.5dB
Max Frequency 860MHz
Frequency - Transition 470MHz~860MHz
Collector Base Voltage (VCBO) 65V
Highest Frequency Band ULTRA HIGH FREQUENCY B

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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