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MS2361

Microsemi Corporation
RoHS
/
Package M115
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Trans GP BJT NPN 65V 5.5A 4-Pin
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Technical Details

Physical

Mount Chassis Mount, Surface Mount
Mounting Type Chassis Mount
Package / Case M115
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish TIN LEAD
Subcategory Other Transistors
Max Power Dissipation 87.5W
Terminal Position RADIAL
Terminal Form FLAT
Pin Count 4
Case Connection BASE
Power - Max 87.5W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 2.6A
Collector Emitter Breakdown Voltage 65V
Gain 9dB
Frequency - Transition 1.025GHz~1.15GHz
Collector Base Voltage (VCBO) 65V
Highest Frequency Band L B

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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