MS1007

Microsemi Corporation

RoHS

Package M174

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF

Description Trans GP BJT NPN 55V 10A 4-Pin Case M174

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Inventory: 2009

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Technical Details

Supply Chain

Lifecycle Status IN PRODUCTION (Last Updated: 2 weeks ago)

Physical

Mount Chassis Mount, Screw

Mounting Type Chassis Mount

Package / Case M174

Number of Pins 4

Transistor Element Material SILICON

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

Lead Free Lead Free

Technical

Operating Temperature 200°C TJ

Packaging Bulk

Published 2003

JESD-609 Code e0

Pbfree Code no

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 4

ECCN Code EAR99

Terminal Finish TIN LEAD

Additional Feature WITH EMITTER BALLASTING RESISTORS

Max Power Dissipation 233W

Terminal Position RADIAL

Terminal Form FLAT

Pin Count 4

Number of Elements 1

Configuration SINGLE

Output Power 150W

Transistor Application AMPLIFIER

Polarity/Channel Type NPN

Transistor Type NPN

Collector Emitter Voltage (VCEO) 55V

Max Collector Current 10A

DC Current Gain (hFE) (Min) @ Ic, Vce 18 @ 1.4A 6V

Collector Emitter Breakdown Voltage 55V

Gain 14dB

Max Frequency 30MHz

Frequency - Transition 30MHz

Collector Base Voltage (VCBO) 110V

Highest Frequency Band HIGH FREQUENCY B

Collector-Base Capacitance-Max 220pF

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