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HN1C03F-B(TE85L,F)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package SC-74, SOT-457
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description Trans GP BJT NPN 20V 0.3A 6-Pin SM T/R
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Inventory: 15104
Minimum: 1
Total Price: USD $0.13
Unit Price: USD $0.12768
≥1 USD $0.12768
≥10 USD $0.104738
≥100 USD $0.101745
≥500 USD $0.097755
≥1000 USD $0.094763

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Supplier Device Package SM6

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 300mW
Frequency 30MHz
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 300mW
Power - Max 300mW
Gain Bandwidth Product 30MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 350 @ 4mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 100mV @ 3mA, 30mA
Collector Emitter Breakdown Voltage 20V
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 300mA
Collector Emitter Saturation Voltage 42mV
Max Breakdown Voltage 20V
Frequency - Transition 30MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 25V
hFE Min 200

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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