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HN2C01FEYTE85LF

Toshiba Semiconductor and Storage
RoHS
/
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A
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Inventory: 2723
Minimum: 1
Total Price: USD $0.09
Unit Price: USD $0.0924
≥1 USD $0.0924
≥10 USD $0.072072
≥100 USD $0.061354
≥500 USD $0.054645
≥1000 USD $0.051846

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Polarity NPN
Element Configuration Dual
Power - Max 100mW
Gain Bandwidth Product 60MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 120

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