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RoHS
RoHS RoHS compliant
Package 8-VDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description Bipolar Transistors - BJT 20V PNP 3x2 MLP
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Technical Details

Technical

Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation 1.7W
Terminal Position QUAD
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -3.5A
Frequency 180MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTD2M832
Pin Count 10
JESD-30 Code R-PQFP-F10
Qualification Status Not Qualified
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 3W
Case Connection COLLECTOR
Power - Max 1.7W
Transistor Application SWITCHING
Gain Bandwidth Product 180MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 3.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 2A 2V
Current - Collector Cutoff (Max) 25nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 350mA, 3.5A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 180MHz
Collector Emitter Saturation Voltage -240mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) -25V
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current -3.5A

Dimensions

Height 1mm
Length 3mm
Width 2mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free
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