HN3C51F-BL(TE85L,F

Toshiba Semiconductor and Storage

RoHS

Package SC-74, SOT-457

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays

Description Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A

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Inventory: 9953

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Technical Details

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case SC-74, SOT-457

Number of Pins 6

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ

Packaging Cut Tape (CT)

Published 2009

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Max Power Dissipation 300mW

Frequency 100MHz

Number of Elements 2

Polarity NPN

Element Configuration Dual

Power Dissipation 300mW

Gain Bandwidth Product 100MHz

Transistor Type 2 NPN (Dual)

Collector Emitter Voltage (VCEO) 300mV

Max Collector Current 100mA

DC Current Gain (hFE) (Min) @ Ic, Vce 350 @ 2mA 6V

Current - Collector Cutoff (Max) 100nA ICBO

Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA

Collector Emitter Breakdown Voltage 120V

Collector Emitter Saturation Voltage 300mV

Max Breakdown Voltage 120V

Collector Base Voltage (VCBO) 120V

Emitter Base Voltage (VEBO) 5V

hFE Min 200

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