HN3C51F-BL(TE85L,F

Toshiba Semiconductor and Storage

RoHS

Package SC-74, SOT-457

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays

Description Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A

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Technical Details

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case SC-74, SOT-457

Number of Pins 6

Technical

Operating Temperature 150°C TJ

Packaging Cut Tape (CT)

Published 2009

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Max Power Dissipation 300mW

Frequency 100MHz

Number of Elements 2

Polarity NPN

Element Configuration Dual

Power Dissipation 300mW

Gain Bandwidth Product 100MHz

Transistor Type 2 NPN (Dual)

Collector Emitter Voltage (VCEO) 300mV

Max Collector Current 100mA

DC Current Gain (hFE) (Min) @ Ic, Vce 350 @ 2mA 6V

Current - Collector Cutoff (Max) 100nA ICBO

Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA

Collector Emitter Breakdown Voltage 120V

Collector Emitter Saturation Voltage 300mV

Max Breakdown Voltage 120V

Collector Base Voltage (VCBO) 120V

Emitter Base Voltage (VEBO) 5V

hFE Min 200

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

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