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HN2A01FE-GR(TE85LF

Toshiba Semiconductor and Storage
RoHS
/
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description TRANS 2PNP 50V 0.15A ES6
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case SOT-563, SOT-666

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 100mW
Transistor Type 2 PNP (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Frequency - Transition 800MHz

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