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PBSS5130PAP,115

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package 6-UDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description PBSS5130PAP - 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor
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Inventory: 95
Minimum: 1
Total Price: USD $0.5
Unit Price: USD $0.49896
≥1 USD $0.49896
≥10 USD $0.426888
≥100 USD $0.296512
≥500 USD $0.231499
≥1000 USD $0.188173

Technical Details

Supply Chain

Factory Lead Time 20 Weeks

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 1.45W
Base Part Number PBSS5130
Pin Count 6
Polarity PNP
Element Configuration Dual
Power - Max 510mW
Gain Bandwidth Product 125MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) -30V
Max Collector Current -2A
DC Current Gain (hFE) (Min) @ Ic, Vce 170 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 280mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 1A
Collector Emitter Saturation Voltage -85mV
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -7V
hFE Min 250

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 6

Alternative Model

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