JANTX2N6989

Microsemi Corporation

RoHS

Package 14-DIP (0.300, 7.62mm)

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays

Description Trans GP BJT NPN 50V 0.8A 14-Pin TO-116

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Inventory: 6364

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Technical Details

Supply Chain

Factory Lead Time 23 Weeks

Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)

Compliance

Radiation Hardening No

RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -65°C~200°C TJ

Packaging Bulk

Published 2002

Series Military, MIL-PRF-19500/559

JESD-609 Code e0

Pbfree Code no

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 14

ECCN Code EAR99

Terminal Finish Tin/Lead (Sn/Pb)

Max Power Dissipation 1.5W

Terminal Position DUAL

Pin Count 14

Reference Standard MIL-19500/559F

Qualification Status Qualified

Number of Elements 4

Polarity NPN

Power Dissipation 1.5W

Transistor Application SWITCHING

Transistor Type 4 NPN (Quad)

Collector Emitter Voltage (VCEO) 50V

Max Collector Current 800mA

DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V

Current - Collector Cutoff (Max) 10μA ICBO

JEDEC-95 Code TO-116

Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA

Collector Emitter Breakdown Voltage 50V

Collector Base Voltage (VCBO) 75V

Emitter Base Voltage (VEBO) 6V

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