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MBR200200CT

GeneSiC Semiconductor
RoHS
RoHS RoHS compliant
Package Twin Tower
Category Discrete Semiconductor Products / Diodes - Rectifiers - Arrays
Description DIODE SCHOTTKY 200V 100A 2 TOWER
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Inventory: 1035
Minimum: 1
Total Price: USD $180.97
Unit Price: USD $180.97263
≥1 USD $180.97263
≥200 USD $72.209566
≥480 USD $69.797112
≥1000 USD $68.60467

Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status PRODUCTION (Last Updated: 5 months ago)

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON

Technical

Packaging Bulk
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PUFM-X2
Operating Temperature (Max) 150°C
Number of Elements 2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 3mA @ 200V
Voltage - Forward (Vf) (Max) @ If 920mV @ 100A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 200V
Average Rectified Current 100A
Number of Phases 1
Non-rep Pk Forward Current-Max 1500A
Diode Configuration 1 Pair Common Cathode
Reverse Current-Max 3000μA

Compliance

RoHS Status RoHS Compliant

Alternative Model

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