MUR20010CT

GeneSiC Semiconductor

RoHS

RoHS compliant

Package Twin Tower

Category Discrete Semiconductor Products / Diodes - Rectifiers - Arrays

Description Rectifiers 100V 200A Super Fast Recovery

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Technical Details

Supply Chain

Factory Lead Time 6 Weeks

Lifecycle Status PRODUCTION (Last Updated: 6 months ago)

Physical

Mount Chassis Mount

Mounting Type Chassis Mount

Package / Case Twin Tower

Diode Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Packaging Bulk

Published 2010

Pbfree Code yes

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 2

ECCN Code EAR99

HTS Code 8541.10.00.80

Terminal Position UPPER

Terminal Form UNSPECIFIED

JESD-30 Code R-PUFM-X2

Operating Temperature (Max) 175°C

Number of Elements 2

Element Configuration Common Cathode

Speed Fast Recovery =< 500ns, > 200mA (Io)

Diode Type Schottky

Current - Reverse Leakage @ Vr 25μA @ 50V

Voltage - Forward (Vf) (Max) @ If 1.3V @ 100A

Operating Temperature - Junction -55°C~150°C

Max Surge Current 800A

Output Current-Max 100A

Application SUPER FAST RECOVERY

Current - Average Rectified (Io) 200A DC

Max Reverse Voltage (DC) 100V

Average Rectified Current 200A

Number of Phases 1

Reverse Recovery Time 75 ns

Peak Reverse Current 25μA

Reverse Voltage 100V

Diode Configuration 1 Pair Common Cathode

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