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2STC5242

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description STMICROELECTRONICS 2STC5242 Bipolar (BJT) Single Transistor, NPN, 230 V, 30 MHz, 130 W, 8 A, 80
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Technical Details

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON

Dimensions

Height 18.7mm
Length 15.8mm
Width 5mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 130W
Frequency 30MHz
Base Part Number 2STC
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 130W
Power - Max 150W
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 230V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage 230V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage 3V
Collector Base Voltage (VCBO) 230V
Emitter Base Voltage (VEBO) 5V
hFE Min 80

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