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BUT70W

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT NPN High Power
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Inventory: 1689
Minimum: 1
Total Price: USD $89.99
Unit Price: USD $89.987468
≥1 USD $89.987468
≥10 USD $87.084743
≥100 USD $84.182018
≥500 USD $75.472845

Technical Details

Supply Chain

Lifecycle Status NRND (Last Updated: 8 months ago)

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 125V
Max Power Dissipation 200W
Current Rating 7A
Base Part Number BUT70
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 125V
Max Collector Current 32A
Vce Saturation (Max) @ Ib, Ic 900mV @ 7A, 70A
Collector Emitter Breakdown Voltage 125V
Collector Emitter Saturation Voltage 900mV
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) 7V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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