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JAN2N5415S

Microsemi Corporation
RoHS
/
Package TO-205AD, TO-39-3 Metal Can
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Trans GP BJT PNP 200V 1A 3-Pin TO-39
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Technical Details

Supply Chain

Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/485
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 750mW
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
JESD-30 Code O-MBCY-W4
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 750mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-5
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) 6V

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant

Alternative Model

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