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2N3636UB

Microsemi Corporation
RoHS
/
Package 3-SMD, No Lead
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Trans GP BJT PNP 175V 1A 3-Pin UB
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)

Technical

Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.29.00.95
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position DUAL
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power - Max 1.5W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 175V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 50mA
Collector Base Voltage (VCBO) 175V

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, No Lead
Number of Pins 3
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant

Alternative Model

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