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2N2432UB

Microsemi Corporation
RoHS
/
Package 4-SMD, No Lead
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description BJTS
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mounting Type Surface Mount
Package / Case 4-SMD, No Lead
Supplier Device Package UB

Technical

Operating Temperature -65°C~200°C TJ
Published 2007
Part Status Active
Power - Max 360mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1mA 5V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 100mA

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