P2N2907AZL1

Rochester Electronics, LLC

RoHS

Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description SMALL SIGNAL BIPOLAR TRANSISTOR

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Surface Mount NO

Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Box (TB)

JESD-609 Code e0

Pbfree Code no

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Terminal Finish TIN LEAD

Additional Feature EUROPEAN PART NUMBER

HTS Code 8541.21.00.75

Terminal Position BOTTOM

Peak Reflow Temperature (Cel) 240

Time@Peak Reflow Temperature-Max (s) 30

Pin Count 3

JESD-30 Code O-PBCY-T3

Qualification Status Not Qualified

Number of Elements 1

Configuration SINGLE

Power - Max 625mW

Transistor Application AMPLIFIER

Polarity/Channel Type PNP

Transistor Type PNP

DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V

Current - Collector Cutoff (Max) 10nA

Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) 60V

Current - Collector (Ic) (Max) 600mA

Transition Frequency 200MHz

Frequency - Transition 200MHz

Turn Off Time-Max (toff) 110ns

Turn On Time-Max (ton) 50ns

Compliance

RoHS Status Non-RoHS Compliant

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