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FJP3835TU

Rochester Electronics, LLC
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description POWER BIPOLAR TRANSISTOR, NPN
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 50W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 3A 4V
Current - Collector Cutoff (Max) 100μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 500mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 8A
Transition Frequency 30MHz
Frequency - Transition 30MHz

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