TIP100G | Discrete Semiconductor Products/Transistors - Bipolar (BJT) - Single

Supply Chain

Factory Lead Time 2 Weeks

Lifecycle Status ACTIVE (Last Updated: 14 hours ago)

Physical

Contact Plating Tin

Mounting Type Through Hole

Package / Case TO-220-3

Surface Mount NO

Number of Pins 3

Weight 4.535924g

Transistor Element Material SILICON

Dimensions

Height 6.35mm

Length 6.35mm

Width 25.4mm

Compliance

Radiation Hardening No

REACH SVHC No SVHC

RoHS Status ROHS3 Compliant

Lead Free Lead Free

Technical

Operating Temperature -65°C~150°C TJ

Packaging Tube

Published 2001

JESD-609 Code e3

Pbfree Code yes

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Subcategory Other Transistors

Voltage - Rated DC 60V

Max Power Dissipation 2W

Peak Reflow Temperature (Cel) 260

Current Rating 8A

Time@Peak Reflow Temperature-Max (s) 40

Base Part Number TIP10*

Pin Count 3

Number of Elements 1

Polarity NPN

Element Configuration Single

Power Dissipation 40W

Case Connection COLLECTOR

Transistor Application AMPLIFIER

Transistor Type NPN - Darlington

Collector Emitter Voltage (VCEO) 60V

Max Collector Current 8A

DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A 4V

Current - Collector Cutoff (Max) 50μA

JEDEC-95 Code TO-220AB

Vce Saturation (Max) @ Ib, Ic 2.5V @ 80mA, 8A

Collector Emitter Breakdown Voltage 60V

Collector Emitter Saturation Voltage 2V

Collector Base Voltage (VCBO) 60V

Emitter Base Voltage (VEBO) 5V

hFE Min 200

Continuous Collector Current 4A