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2N4449UB

Microsemi Corporation
RoHS
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Package /
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Trans GP BJT NPN 20V 3-Pin UB
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Technical Details

Supply Chain

Factory Lead Time 18 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Number of Pins 3
Supplier Device Package UB
Transistor Element Material SILICON

Technical

Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/317
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
HTS Code 8541.21.00.95
Subcategory Other Transistors
Max Power Dissipation 400mW
Terminal Position DUAL
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power - Max 360mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 100mA 1V
Current - Collector Cutoff (Max) 400nA
Vce Saturation (Max) @ Ib, Ic 450mV @ 10mA, 100mA
Collector Base Voltage (VCBO) 40V
Turn Off Time-Max (toff) 18ns
Turn On Time-Max (ton) 12ns

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant

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