JANTXV2N3741

Microsemi Corporation

RoHS

Package TO-213AA, TO-66-2

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description Trans GP BJT PNP 80V 4A 3-Pin(2+Tab) TO-66

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Inventory: 6419

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Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)

Physical

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-213AA, TO-66-2

Number of Pins 3

Transistor Element Material SILICON

Technical

Operating Temperature -65°C~200°C TJ

Packaging Bulk

Published 2002

Series Military, MIL-PRF-19500/441

JESD-609 Code e0

Pbfree Code no

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 2

ECCN Code EAR99

Terminal Finish Tin/Lead (Sn/Pb)

Max Power Dissipation 25W

Terminal Position BOTTOM

Terminal Form PIN/PEG

Pin Count 2

JESD-30 Code O-MBFM-P2

Qualification Status Qualified

Number of Elements 1

Configuration SINGLE

Power Dissipation 25W

Case Connection COLLECTOR

Transistor Application SWITCHING

Polarity/Channel Type PNP

Transistor Type PNP

Collector Emitter Voltage (VCEO) 80V

Max Collector Current 4A

DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 250mA 1V

Current - Collector Cutoff (Max) 10μA

Vce Saturation (Max) @ Ib, Ic 600mV @ 125mA, 1A

Collector Base Voltage (VCBO) 80V

Emitter Base Voltage (VEBO) 7V

Compliance

Radiation Hardening No

RoHS Status Non-RoHS Compliant

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