JAN2N5664

Microsemi Corporation

RoHS

Package TO-213AA, TO-66-2

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description Trans GP BJT NPN 200V 5A 3-Pin(2+Tab) TO-66

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Inventory: 3668

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Technical Details

Supply Chain

Factory Lead Time 22 Weeks

Lifecycle Status IN PRODUCTION (Last Updated: 4 weeks ago)

Physical

Contact Plating Lead, Tin

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-213AA, TO-66-2

Transistor Element Material SILICON

Technical

Operating Temperature -65°C~200°C TJ

Packaging Bulk

Published 2007

Series Military, MIL-PRF-19500/455

JESD-609 Code e0

Pbfree Code no

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 2

ECCN Code EAR99

Terminal Finish Tin/Lead (Sn/Pb)

Max Power Dissipation 2.5W

Terminal Position BOTTOM

Terminal Form PIN/PEG

Peak Reflow Temperature (Cel) NOT SPECIFIED

Reach Compliance Code not_compliant

Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Pin Count 2

JESD-30 Code O-MBFM-P2

Qualification Status Qualified

Number of Elements 1

Configuration SINGLE

Power Dissipation 2.5W

Case Connection COLLECTOR

Transistor Application SWITCHING

Polarity/Channel Type NPN

Transistor Type NPN

Collector Emitter Voltage (VCEO) 200V

Max Collector Current 5A

DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A 5V

Current - Collector Cutoff (Max) 200nA

Vce Saturation (Max) @ Ib, Ic 1V @ 5A, 1A

Collector Base Voltage (VCBO) 250V

Emitter Base Voltage (VEBO) 6V

Compliance

RoHS Status Non-RoHS Compliant

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