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JAN2N4236

Microsemi Corporation
RoHS
/
Package TO-205AD, TO-39-3 Metal Can
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Trans GP BJT NPN 80V 1A 3-Pin TO-39
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/580
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Qualification Status Qualified
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation 1W
Transistor Application AMPLIFIER
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 250mA 1V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 7V

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