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Transistors - Bipolar (BJT) - Single
2N5551_J05Z

2N5551_J05Z

ON Semiconductor

RoHS

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Package TO-226-3, TO-92-3 (TO-226AA)

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description TRANS NPN 160V 0.6A TO-92

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Inventory: 8895

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA)

Technical

Operating Temperature -55°C~150°C TJ

Packaging Bulk

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Base Part Number 2N5551

Power - Max 625mW

Transistor Type NPN

DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V

Current - Collector Cutoff (Max) 50nA ICBO

Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) 160V

Current - Collector (Ic) (Max) 600mA

Frequency - Transition 100MHz

Alternative Model

IPD06P003NSAUMA1

Infineon Technologies

Infineon Technologies

Microsemi Corporation

Infineon Technologies

Microsemi Corporation

Vishay Semiconductor Diodes Division

Nexperia USA Inc.

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