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Transistors - Bipolar (BJT) - Single
2N5306_D74Z

2N5306_D74Z

ON Semiconductor

RoHS

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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description TRANS NPN DARL 25V 1.2A TO-92

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Technical Details

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Box (TB)

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Base Part Number 2N5306

Power - Max 625mW

Transistor Type NPN - Darlington

DC Current Gain (hFE) (Min) @ Ic, Vce 7000 @ 2mA 5V

Current - Collector Cutoff (Max) 100nA ICBO

Vce Saturation (Max) @ Ib, Ic 1.4V @ 200μA, 200mA

Voltage - Collector Emitter Breakdown (Max) 25V

Current - Collector (Ic) (Max) 1.2A

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Alternative Model

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