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ZTX849STOB

Diodes Incorporated
RoHS
/
Package E-Line-3, Formed Leads
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT NPN Big Chip SELine
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Weight 453.59237mg
Transistor Element Material SILICON

Dimensions

Height 4.01mm
Length 4.77mm
Width 2.41mm

Technical

Operating Temperature -55°C~200°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.29.00.75
Voltage - Rated DC 30V
Max Power Dissipation 1.2W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 5A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZTX849
Pin Count 3
JESD-30 Code R-PSIP-W3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 220mV
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 220mV @ 200mA, 5A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 5A

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