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ESM2012DV

STMicroelectronics
RoHS
RoHS RoHS compliant
Package ISOTOP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description TRANS NPN DARL 120V 120A ISOTOP
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case ISOTOP
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Nickel (Ni)
Subcategory BIP General Purpose Power
Voltage - Rated DC 120V
Max Power Dissipation 175W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 120A
Base Part Number ESM2012
Pin Count 4
Number of Elements 1
Polarity NPN
Configuration DARLINGTON WITH BUILT-IN DIODE
Power Dissipation 175W
Case Connection ISOLATED
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 120A
DC Current Gain (hFE) (Min) @ Ic, Vce 1200 @ 100A 5V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 100A
Collector Emitter Breakdown Voltage 120V
Collector Emitter Saturation Voltage 1.5V
Emitter Base Voltage (VEBO) 7V
hFE Min 1200
VCEsat-Max 2 V
Fall Time-Max (tf) 300ns

Dimensions

Width 25.4mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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