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Transistors - Bipolar (BJT) - Single
KSC3502ES

KSC3502ES

ON Semiconductor

RoHS

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Package TO-225AA, TO-126-3

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description TRANS NPN 200V 0.1A TO-126

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Inventory: 2167

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-225AA, TO-126-3

Supplier Device Package TO-126-3

Technical

Operating Temperature 150°C TJ

Packaging Bulk

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Power - Max 1.2W

Transistor Type NPN

DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 10V

Current - Collector Cutoff (Max) 100nA ICBO

Vce Saturation (Max) @ Ib, Ic 600mV @ 2mA, 20mA

Voltage - Collector Emitter Breakdown (Max) 200V

Current - Collector (Ic) (Max) 100mA

Frequency - Transition 150MHz

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