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FJP5027O

ON Semiconductor
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description TRANS NPN 800V 3A TO-220
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature HIGH RELIABILITY
Terminal Position SINGLE
Reach Compliance Code compliant
Base Part Number FJP5027
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Power - Max 50W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 200mA 5V
Current - Collector Cutoff (Max) 10μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2V @ 300mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) 800V
Current - Collector (Ic) (Max) 3A
Transition Frequency 15MHz
Frequency - Transition 15MHz
Power Dissipation-Max (Abs) 50W
VCEsat-Max 2 V
Turn Off Time-Max (toff) 3300ns
Turn On Time-Max (ton) 500ns
Fall Time-Max (tf) 300ns

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