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2SC2655-Y(TE6,F,M)

Toshiba Semiconductor and Storage
RoHS
/
Package TO-226-3, TO-92-3 Long Body
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Trans GP BJT NPN 50V 2A 3-Pin LSTM T/R
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Inventory: 158573
Minimum: 1
Total Price: USD $0.28
Unit Price: USD $0.282293
≥1 USD $0.282293
≥10 USD $0.23142
≥100 USD $0.224438
≥500 USD $0.217455
≥1000 USD $0.210473

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Number of Pins 3
Supplier Device Package TO-92MOD

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 900mW
Polarity NPN
Element Configuration Single
Power - Max 900mW
Gain Bandwidth Product 100MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 2A
Collector Emitter Saturation Voltage 500mV
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 70

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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