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Transistors - Bipolar (BJT) - Single
2SC4793,HFEF(M

2SC4793,HFEF(M

Toshiba Semiconductor and Storage

RoHS

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Package TO-220-3 Full Pack

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description TRANS NPN 1A 230V TO220-3

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Inventory: 9479

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-220-3 Full Pack

Technical

Operating Temperature 150°C TJ

Packaging Bulk

Published 2007

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Power - Max 2W

Transistor Type NPN

DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 5V

Current - Collector Cutoff (Max) 1μA ICBO

Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) 230V

Current - Collector (Ic) (Max) 1A

Frequency - Transition 100MHz

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