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2SC5201,T6MURAF(J

Toshiba Semiconductor and Storage
RoHS
/
Package TO-226-3, TO-92-3 Long Body
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description TRANS NPN 50MA 600V TO226-3
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 900mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 20mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 20mA
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 50mA

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