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BCX5516E6433HTMA1

Infineon Technologies
RoHS
/
Package TO-243AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Trans GP BJT NPN 60V 1A T/R
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Inventory: 4091
Minimum: 1
Total Price: USD $0.06
Unit Price: USD $0.064838
≥1 USD $0.064838
≥10 USD $0.053865
≥100 USD $0.05187
≥500 USD $0.049875
≥1000 USD $0.048878

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Power Dissipation 2W
Terminal Position SINGLE
Terminal Form FLAT
Frequency 100MHz
Base Part Number BCX55
JESD-30 Code R-PSSO-F3
Number of Elements 1
Configuration SINGLE
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Current - Collector (Ic) (Max) 1A
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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