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SI1012X-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SC-89, SOT-490
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 500MA SC89-3
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Inventory: 16396
Minimum: 1
Total Price: USD $0.06
Unit Price: USD $0.056684
≥1 USD $0.056684
≥10 USD $0.055017
≥100 USD $0.05335
≥500 USD $0.051266

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Number of Pins 3
Weight 29.993795mg
Transistor Element Material SILICON

Dimensions

Height 800μm
Length 1.7mm
Width 950μm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 700mOhm
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 250mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250mW
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 700m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 500mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V
Rise Time 5 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 600mA
Threshold Voltage 900mV
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.5A
Drain to Source Breakdown Voltage 20V

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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