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NTA4151PT1G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package SC-75, SOT-416
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 0.76A SOT-416
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Inventory: 174189
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Total Price: USD $0.01
Unit Price: USD $0.013863
≥1 USD $0.013863
≥10 USD $0.013455
≥100 USD $0.013047
≥500 USD $0.012538

Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)

Physical

Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON

Dimensions

Height 800μm
Length 1.65mm
Width 900μm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 260mOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -760mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation-Max 301mW Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 301mW
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 156pF @ 5V
Current - Continuous Drain (Id) @ 25°C 760mA Tj
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V
Rise Time 8.2 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 8.2 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 760mA
Threshold Voltage -450mV
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.76A
Drain to Source Breakdown Voltage -20V

Alternative Model

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