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TN6715A_D75Z

ON Semiconductor
RoHS
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Package TO-226-3, TO-92-3 Long Body (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT NPN Dbl-Dif 50V SI Exptl Plnr
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package TO-226

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 1A 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 1.5A
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