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2SD1407A-Y(F)

Toshiba Semiconductor and Storage
RoHS
/
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description TRANS NPN 100V 5A TO220NIS
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 30W
Element Configuration Single
Gain Bandwidth Product 12MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 400mA, 4A
Collector Emitter Breakdown Voltage 100V
Current - Collector (Ic) (Max) 5A
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 120

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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