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2SC2705-Y(TE6,F,M)

Toshiba Semiconductor and Storage
RoHS
/
Package TO-226-3, TO-92-3 Long Body
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description TRANS NPN 150V 0.05A TO-92
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Number of Pins 3

Technical

Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 800mW
Reach Compliance Code unknown
Frequency 200MHz
Number of Elements 1
Power Dissipation 800mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 1mA, 10mA
Collector Emitter Breakdown Voltage 150V
Current - Collector (Ic) (Max) 50mA
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 5V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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