BCW66KHB6327HTLA1

Infineon Technologies

RoHS

Package TO-236-3, SC-59, SOT-23-3

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description Trans GP BJT NPN 45V 0.8A 3-Pin SOT-23 T/R

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Technical Details

Physical

Contact Plating Tin

Mount Surface Mount

Mounting Type Surface Mount

Package / Case TO-236-3, SC-59, SOT-23-3

Number of Pins 3

Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ

Packaging Tape & Reel (TR)

Published 2007

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Max Power Dissipation 500mW

Terminal Position DUAL

Terminal Form GULL WING

Peak Reflow Temperature (Cel) NOT SPECIFIED

Frequency 170MHz

Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Base Part Number BCW66

Number of Elements 1

Configuration SINGLE

Power Dissipation 500mW

Transistor Application AMPLIFIER

Polarity/Channel Type NPN

Transistor Type NPN

Collector Emitter Voltage (VCEO) 45V

Max Collector Current 800mA

DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V

Current - Collector Cutoff (Max) 20nA ICBO

Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA

Collector Emitter Breakdown Voltage 45V

Current - Collector (Ic) (Max) 800mA

Transition Frequency 170MHz

Collector Base Voltage (VCBO) 75V

Emitter Base Voltage (VEBO) 5V

Compliance

RoHS Status RoHS Compliant

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