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JANTXV2N3439UA

Microsemi Corporation
RoHS
/
Package 4-SMD, No Lead
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Trans GP BJT NPN 350V 1A 4-Pin UA
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Technical Details

Supply Chain

Factory Lead Time 36 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-SMD, No Lead
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/368
JESD-609 Code e4
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Gold (Au) - with Nickel (Ni) barrier
Subcategory Other Transistors
Max Power Dissipation 800mW
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 800mW
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA 10V
Current - Collector Cutoff (Max) 2μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 50mA
Collector Base Voltage (VCBO) 450V
Emitter Base Voltage (VEBO) 7V

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant

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